Hot Excitons in Highly Excited CdS
- 14 February 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (7) , 437-439
- https://doi.org/10.1103/physrevlett.28.437
Abstract
Hot exciton distributions, as much as 30°K in excess of the He ambient, are observed in optically pumped CdS. The effective exciton temperature is determined by analyzing the luminescence line shape for recombination of free excitons. The exciton state is found to remain a viable excitation up to the maximum pump intensity of W/, with the only observed response to the increasing pump power being a rise in effective exciton temperature.
Keywords
This publication has 4 references indexed in Scilit:
- Induced Absorption in the Presence of High Electronic ExcitationPhysical Review Letters, 1971
- Exciton-Exciton Interaction in CdS, CdSe, and ZnOPhysical Review Letters, 1970
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969
- Phonon-Assisted Recombination of Free Excitons in Compound SemiconductorsPhysical Review B, 1968