Hole injection oxide breakdown model for very low voltage lifetime extrapolation
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 8, 7-12
- https://doi.org/10.1109/relphy.1993.283311
Abstract
An anode hole injection model for silicon dioxide breakdown characterization is presented. The model is valid for a large thickness range between 2.5 nm and at least 13 nm, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. The model extrapolation predicts Q/sub BD/ and t/sub BD/ behavior including a fluence in excess of 10/sup 7/ C/cm/sup 2/ at V/sub ox/=2.4 V for a 2.5-nm oxide. Moreover, it is fully complementary with the well-known thick oxide 1/E model, while offering the ability to predict oxide reliability for low voltages.Keywords
This publication has 10 references indexed in Scilit:
- Ultra-thin silicon dioxide leakage current and scaling limitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n+and p+polysilicon gatesIEEE Electron Device Letters, 1987
- Electron-trap generation by recombination of electrons and holes in SiO2Journal of Applied Physics, 1987
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Quantum yield of electron impact ionization in siliconJournal of Applied Physics, 1985
- Novel Mechanism for Tunneling and Breakdown of Thin SiFilmsPhysical Review Letters, 1983
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surfaceJournal of Applied Physics, 1976
- Oscillations in MOS tunnelingJournal of Applied Physics, 1975