Effects of Hydrogen on Electrical and Chemical Properties of Low-k Hydrogen Silsesquioxane as an Intermetal Dielectric for Nonetchback Processes
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 2 (8) , 390-392
- https://doi.org/10.1149/1.1390847
Abstract
The hydrogen plasma and hydrogen ion implantation post‐treatments are applied for the first time to low‐k hydrogen silsesquioxane (HSQ). These two post‐treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post‐treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and plasma attack during the nonetchback integrated process. ©1999 The Electrochemical SocietyKeywords
This publication has 0 references indexed in Scilit: