Quasi-one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown on patterned substrates

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Abstract
Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs(001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron systems. We estimate the electron mobility in a ∼250 nm wide wire to be larger than 51 000 cm2/V s at a carrier concentration of 3.3×1011 cm−2.This mobility is comparable to the one measured in a wide reference sample fabricated under identical conditions.

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