Efficient transient analysis of transistor circuits from device fabrication data
- 1 March 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 62 (3) , 408-410
- https://doi.org/10.1109/PROC.1974.9437
Abstract
Tabulated values of transistor charge-current-voltage characteristics are generated directly from device process parameters An efficient numerical Laplace inversion method is used with a piecewise-linear approximation technique to obtain the time response of the transistor in a given circuit.Keywords
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