Molecular and atomic damage in germanium

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Abstract
Measurements of the lattice disorder resulting from equal atom-dose implants of various molecular and monatomic ions have been obtained in germanium, using the Rutherford backscattering/channeling-effect technique. As in the earlier studies in silicon, the molecular beams produce significantly more damage than the same atomic fluence of monatomic ions, indicating that damage production depends not only on the total amount of deposited energy but on its localized concentration. Reflection electron diffraction and replica techniques have also been used to provide information on the structure of damage and on the surface topography of the implanted germanium.