Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy
- 9 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23) , 1615-1616
- https://doi.org/10.1063/1.96834
Abstract
Atomic layer epitaxy has been employed to produce good-quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic emission lines and a very weak deep center emission band.Keywords
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