Subsurface As-layer formation in Au films deposited on GaAs(001)
- 30 April 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (4) , 339-342
- https://doi.org/10.1016/0038-1098(85)90010-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Unit Charge on Supported Gold Clusters in Photoemission Final StatePhysical Review Letters, 1983
- Schottky barrier formation of Ag on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Schottky barrier formation and intermixing of noble metals on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Photoemission studies of the effect of temperature on the Au–GaAs(110) interfaceJournal of Vacuum Science & Technology A, 1983
- Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfacesJournal of Vacuum Science and Technology, 1982
- Interface reaction of gold films with n-type Ga0.7Al0.3As and GaAsThin Solid Films, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- On the growth of Au on clean and contaminated GaAs(001) surfacesJournal of Crystal Growth, 1977
- Surface molecules and chemisorption. II. Photoemission angular distributionsPhysical Review B, 1974
- Charge Flow andCompensation in Gold AlloysPhysical Review B, 1971