High performance Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As HFETs
- 29 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (7) , 488-490
- https://doi.org/10.1049/el:19900317
Abstract
MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3 μm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of −4.5 V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12 mS/mm and a transconductance in excess of 420 mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3 μm gate length. These values are the highest reported for devices of this geometry at room temperature.Keywords
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