Scaling possibility of pzt capacitors for high density and low-voltage nvfram application
- 1 September 1997
- journal article
- non volatile-memories-and-materials
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 17 (1-4) , 81-88
- https://doi.org/10.1080/10584589708012983
Abstract
Scaling limit of the PZT capacitors for high-density and low-voltage Nonvolatile Ferroelectric RAM (NVFRAM) is described using the memory operation scheme for data read-out. The analysis is performed using the measured switching polarization characteristics of our 3 × 3μm2 PZT capacitors applicable to 1 Mbit NVFRAM. 16Mbit NVFRAM can be realized with simple shrinkage of our planar-type PZT capacitor without having to fabricate a stacked or trench capacitor.Keywords
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