Abstract
The thermoelectric power of tin oxide film has been measured in the carrier concentration range 9*1018 to 1.6*1021 cm-3 between 27 and 160 degrees C. Different types of scattering mechanisms have been analyzed approximately on an empirical basis. It is found that at room temperature ionised impurity scattering is dominant only in cases where the carrier concentration is >or approximately=1020 cm-3. Thermoelectric power for films deposited on to glass substrates can be expressed as Q=aT+n, and the Fermi levels are found to become gradually pinned near the band edge with the decrease of carrier concentration.