Surfons and the electron mobility in a semiconductor inversion layer
- 1 August 1971
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 27 (1) , 218-220
- https://doi.org/10.1016/0039-6028(71)90173-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Electron mobility in a semiconductor inversion layer: Possible contribution from bulk phononsSurface Science, 1971
- Electrons and “SURFONS” in a semiconductor inversion layerSurface Science, 1971
- Determination of Deformation Potential Constants from the Electron Cyclotron Resonance in Germanium and SiliconJournal of the Physics Society Japan, 1970
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion LayerJournal of the Physics Society Japan, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956