A miniature Q-band low noise amplifier using 0.13-μm CMOS technology
- 30 May 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 16 (6) , 327-329
- https://doi.org/10.1109/lmwc.2006.875628
Abstract
A miniature Q-band low noise amplifier (LNA) using 0.13-/spl mu/m standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm/sup 2/. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.Keywords
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