Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

8 January 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (2) , 275-277
https://doi.org/10.1063/1.115661

Abstract

We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron‐beam fabricated Al/Al₂O₃/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.

Keywords

ALUMINIUM OXIDES
ALUMINIUM
ANODIZATION
FABRICATION
IV CHARACTERISTIC
NANOSTRUCTURES
TUNNEL DIODES

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