An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHzKeywords
This publication has 4 references indexed in Scilit:
- 40-W/mm Double Field-plated GaN HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- 370-W Output Power GaN-FET Amplifier with Low Distortion for W-CDMA Base StationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power ApplicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004