Positron annihilation at the Si/SiO2 interface
- 1 January 1992
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (1) , 530-532
- https://doi.org/10.1063/1.350694
Abstract
Variable‐energy positron annihilation depth‐profiling has been applied to the study of the Si/SiO2 interface in Al‐gate metal‐oxide‐semiconductor (MOS) structures. For both n‐ and p‐type silicon under conditions of negative gate bias, the positron annihilation S‐factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.This publication has 4 references indexed in Scilit:
- Metal/oxide/semiconductor interface investigated by monoenergetic positronsPhysics Letters A, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- SiO2/Si interface probed with a variable-energy positron beamApplied Physics Letters, 1987
- Slow-positron apparatus for surface studiesReview of Scientific Instruments, 1980