Inversion-channel Si/SiGe heterojunction field-effect transistor
- 19 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (24) , 2234-2235
- https://doi.org/10.1049/el:19921435
Abstract
The p-channel operation of a selfaligned heterojunction field-effect transistor (HFET) based on an Si/Si0.75Ge0.25 hetero-structure is demonstrated. Extrinsic transconductance gm greater than 8ms/mm for a device with 1μm gate length was measured at 300K. The high-frequency 3dB point has been measured to be 1.8GHz.Keywords
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