The correlation of open-circuit voltage with bandgap in amorphous silicon-based pin solar cells

1 January 1996

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 353 (1) , 101-108
https://doi.org/10.1063/1.49397

Abstract

We briefly review the correlation of open‐circuit voltages V OC with the bandgap of the intrinsic layer in amorphous silicon based pin solar cells. We discuss two mechanisms which limit V OC: intrinsic layer recombination, and the built‐in potential V BI. In particular we discuss Li’s proposal that the open‐circuit voltages in higher bandgap cells (E G>1.9 eV) are V BI‐limited. Based on computer simulations of pin solar cells we propose that V BI limitation occurs when the recombination limit to V OC exceeds the cell’s field‐reversal voltage V R. For a‐Si:H based cells this field‐reversal voltage occurs at about V BI‐0.3 V. This proposal would account for the observation that V BI limitation occurs for V OC significantly smaller than V BI.

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