Si/CoSi 2 /Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi 2 grating

Abstract
Permeable base transistors have been fabricated by silicon molecular beam epitaxy over a CoSi2 grating, epitaxially grown on top of an Si wafer. The Si channel widths range from 4 μm down to 1 μm. Collector current/voltage characteristics are presented which exhibit the main expected features of an Si permeable base transistor.