Resistivity and Density of Ge Films Obliquely Deposited in Vacuum
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (2) , 833-836
- https://doi.org/10.1063/1.1660101
Abstract
Ge films were made at 5×10−6 Torr by an oblique deposition. Resistivity and its change due to oxygen exposure were measured for different deposition angles. Resistivity anisotropy and its change caused by oxygen exposure were also measured. They increased with the deposition angle. The mass of the film was measured by a microbalance and its density was calculated. The density of the film was less than that of bulk and became smaller with an increase of the deposition angle. These phenomena are explained by the self‐shadowing effect.This publication has 9 references indexed in Scilit:
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