Scanning Tunneling Microscope Fabrication of Atomic-Scale Memory on a Silicon Surface
- 1 February 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (2A) , L190-193
- https://doi.org/10.1143/jjap.33.l190
Abstract
By using a scanning tunneling microscope (STM) operated in an ultrahigh vacuum, we can extract single Si atoms from predetermined positions of the Si(111)-7×7 surface through field evaporation. This technique enables us to create specific arrangements of Si vacancies on the surface. Some of the extracted Si atoms can be captured by the tip and redeposited onto the surface. We show that natural Si vacancy defects existing on the surface can be repaired by this technique. These results demonstrate the potential of STM for the construction of atomic-scale data memory.Keywords
This publication has 11 references indexed in Scilit:
- Single-atom manipulation on the Si(111)7 × 7 surface by the scanning tunneling microscope (STM)Surface Science, 1993
- Site-specific measurement of adatom binding energy differences by atom extraction with the STMPhysical Review Letters, 1993
- Formation of Nanometer-Scale Grooves in Silicon with a Scanning Tunneling MicroscopeScience, 1993
- Fabrication of Atomic-Scale Structures on Si(111)-7×7 Using a Scanning Tunneling Microscope (STM)Japanese Journal of Applied Physics, 1992
- Surface modification of MoS2 using an STMApplied Surface Science, 1992
- An atomic switch realized with the scanning tunnelling microscopeNature, 1991
- Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STMScience, 1991
- Atomic emission from a gold scanning-tunneling-microscope tipPhysical Review Letters, 1990
- Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)Journal of Vacuum Science & Technology A, 1989
- Atomic-scale surface modifications using a tunnelling microscopeNature, 1987