Explicit C ∞ -continuous and general model for n MOSFETs
- 27 May 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (11) , 1036-1037
- https://doi.org/10.1049/el:19930693
Abstract
An explicit and single-piece model for nMOSFETs is presented. The drain current and total charges are C∞-continuous under all regions of normal operation. Good agreement has been found with HSPICE simulations. The model also improves the smoothness at the transitions between different regions, and hence the convergence.Keywords
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