Effect of Heavy Doping on the Nucleation and Growth of Bulk Stacking Faults in Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon WafersJapanese Journal of Applied Physics, 1983
- The effects of impurity diffusion and surface damage on oxygen precipitation in siliconJournal of Applied Physics, 1983
- Method to Measure the Precipitated and Total Oxygen Concentration in SiliconJournal of the Electrochemical Society, 1982
- The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystalsJournal of Crystal Growth, 1980
- The effect of doping on microdefect formation in as-grown dislocation-free Czochralski silicon crystalsApplied Physics Letters, 1979
- Interstitial oxygen gettering in Czochralski silicon wafersApplied Physics Letters, 1977
- The Identification, Annihilation, and Suppression of Nucleation Sites Responsible for Silicon Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1976
- Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and GePhysical Review B, 1976
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973