Photoemission yield dependency on bandgap energy for GaInAs alloys
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (1) , 90-91
- https://doi.org/10.1109/PROC.1971.8100
Abstract
The photoemission yield dependency on bandgap energy has been investigated for GaInAs alloys by obtaining a series of spectral response curves for each alloy. The results qualitatively agree with calculated values.Keywords
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