Ab initiopotential energy surfaces for SiH+2

Abstract
Potential surfaces for the ion SiH+ 2 have been calculated by an ab initio configuration interaction method. Contour diagrams are presented for the [Xtilde] 2 A 1 and à 2 B 1 surfaces and show that in each case the entrance valley is separated from the equilibrium configuration by a substantial energy barrier. For collinear geometries, however, there is only a very small activation barrier in addition to the endothermicity for the reaction Bending and stretching potential energy curves are presented for the [Xtilde] 2 A 1 and à 2 B 1 states.