Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

29 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (3) , 113-114
https://doi.org/10.1049/el:19870080

Abstract

Cross-sectional transmission electron microscopy is used to determine the structure of Au-, Ge- and Ni-based ohmic contacts at the interface with AlGaAs/GaAs modulation-doped field-effect-transistor material. Significant lateral diffusion (̃0.12μm) is found to occur at the edge of the contact during alloying. The observed contact structure places a limit on minimum geometries and must be taken into account if accurate device modelling is to be carried out.

Keywords

OHMIC CONTACTS
ALGAAS-GAAS
CONTACT STRUCTURE
DEVICE MODELLING
TRANSMISSION ELECTRON MICROSCOPY
MODULATION-DOPED FIELD-EFFECT-TRANSISTOR
LATERAL DIFFUSION
MODFET

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