Hall Effect in N- and P-type Germanium at 24 Gc
- 1 October 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (10) , 1979-1988
- https://doi.org/10.1143/jpsj.16.1979
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Magneto-plasma Resonance in Semiconductors (I)Journal of the Physics Society Japan, 1960
- Microwave Hall effect in germanium and silicon at 20 kmc/sJournal of Physics and Chemistry of Solids, 1959
- Microwave Faraday Rotation: Design and Analysis of a Bimodal CavityJournal of Applied Physics, 1958
- Hall and Transverse Magnetoresistance Effects for Warped Bands and Mixed ScatteringPhysical Review B, 1958
- Measurement of the Hall Mobility in n-Type Germanium at 9121 MegacyclesJournal of Applied Physics, 1958
- High Frequency Conductivity in SemiconductorsProceedings of the Physical Society. Section B, 1956
- Plasma Resonance in Crystals: Observations and TheoryPhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Hall and Kerr Effects at Microwave FrequenciesPhysical Review B, 1948