Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
- 23 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4) , 362-364
- https://doi.org/10.1063/1.101451
Abstract
X‐ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSy phases which grow on an oxide‐free GaAs surface. While one of these phases is akin to As2S3, another shows significant in‐plane S—S bonding. Raman experiments indicate that the band bending on this disulfide‐ terminated surface has been reduced to 0.12 eV.Keywords
This publication has 18 references indexed in Scilit:
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Passivation of the GaAs surface by an amorphous phosphorus overlayerApplied Physics Letters, 1984
- The electrical behavior of GaAs-insulator interfaces: A discrete energy interface state modelJournal of Applied Physics, 1983
- On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface statesThin Solid Films, 1983
- GaAs metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981
- Monocrystalline aluminium ohmic contact to n-GaAs by H2S adsorptionApplied Physics Letters, 1981
- Reduction of GaAs surface recombination velocity by chemical treatmentApplied Physics Letters, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Perspectives on III–V compound MIS structuresJournal of Vacuum Science and Technology, 1978