Mechanism for reverse-biased breakdown radiation in p-n junctions
- 1 May 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (5) , 485-493
- https://doi.org/10.1016/0038-1101(65)90024-9
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Germanium-Silicon Alloy HeterojunctionsJournal of the Electrochemical Society, 1964
- Microplasma Breakdown in GermaniumJournal of Applied Physics, 1963
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Photon emission from avalanche breakdown in germanium p-n junctionsJournal of Physics and Chemistry of Solids, 1960
- Uniform Silicon p-n Junctions. I. Broad Area BreakdownJournal of Applied Physics, 1960
- Visible Light Emission from Germanium Diffused p–n JunctionJournal of the Physics Society Japan, 1959
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Visible Light from a SiliconJunctionPhysical Review B, 1955
- On the Conductivity of Non-polar Crystals in the Strong Electric Field, IProgress of Theoretical Physics, 1954