Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. nitride
- 1 August 2008
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 48 (8-9) , 1198-1201
- https://doi.org/10.1016/j.microrel.2008.06.045
Abstract
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