Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy

This publication has 21 references indexed in Scilit:

• Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
  IEEE Photonics Technology Letters, 2000
• Band structure of ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}{\mathrm{As}}_{1-y}{\mathrm{N}}_y$ alloys and effects of pressure
  Physical Review B, 1999
• Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm
  Electronics Letters, 1999
• Band Anticrossing in GaInNAs Alloys
  Physical Review Letters, 1999
• GaInNAs: a novel material for long-wavelength semiconductor lasers
  IEEE Journal of Selected Topics in Quantum Electronics, 1997
• Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
  Physical Review Letters, 1996
• Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
  Japanese Journal of Applied Physics, 1992
• The Localized Vibrational Mode of Nitrogen in GaAs
  Physica Status Solidi (a), 1986
• Ion-implanted nitrogen in gallium arsenide
  Journal of Applied Physics, 1973
• Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
  Physical Review B, 1966