Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon

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Abstract
A number of experiments on heterogeneous ion synthesis by substoichiometric implantation closes has been performed. The behaviour of nitrogen and oxygen implanted into silicon as N20+ molecular ions has been studied by the AES and IR-spectroscopy methods. It is shown that implantation results on the formation of a dielectric phase of complex composition. In this case, redistribution of nitrogen atoms was observed during annealing and their profile concentration as it embraced the concentration profile of oxygen atoms. Nonmonotonic dose dependence of silicon oxynitride formation reaction yield has been discovered. The effect in question has been interpreted within the framework of the conceptions of colloid chemistry about condensation processes on Sio2 inclusions, the latter being considered as collectors. The model experiments on successive implantation of nitrogen and oxygen have shown that at a definite relationship of doses and distances between layers enriched with nitrogen and oxygen atoms the effect of their mutual redistribution is possible. It is shown that Si3N4 inclusions may be used as collectors both for oxygen and nitrogen atoms. From these experiments it is concluded that the synthesis of a dielectric phase by substoichiometric implantation doses of nitrogen and oxygen ions can be stimulated by heterogeneous reactions on specially fabricated collectors.

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