Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE

18 June 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (13) , 701-703
https://doi.org/10.1049/el:19870499

Abstract

Losses as low as 0.4 ± 0.1 dB/cm for TE- and 0.65 ± 0.1 dB/ cm for TM-polarised light have been observed in tightly confined single-mode InP/lnGaAsP waveguides grown by MOVPE and processed using RIE. These are the lowest losses reported for InP-based waveguides. The structure could be used to make low-loss modulators for communications wavelengths.

Keywords

VAPOUR PHASE EPITAXIAL GROWTH
0.65 DB
MOVPE
COMMUNICATIONS WAVELENGTHS
INP-INGAASP
INTEGRATED OPTICS
0.4 DB
TM-POLARISED LIGHT
SINGLE-MODE
LOW-LOSS MODULATORS
OPTICAL WAVEGUIDES
RIE
III-V SEMICONDUCTOR TE-POLARISED LIGHT

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