Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10794700,p. 552-562
- https://doi.org/10.1109/cornel.1995.482552
Abstract
DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.Keywords
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