Al₂O₃-Silicon MOS Field Effect Transistors

This publication has 3 references indexed in Scilit:

• The Characteristics of Al-Al₂O₃-Si Structures Formed by Reactive Suttering
  Japanese Journal of Applied Physics, 1968
• Al2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS
  Applied Physics Letters, 1968
• The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
  IEEE Transactions on Electron Devices, 1966