Corrosion of III-V compounds; a comparative study of GaAs and InP
- 1 October 1991
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 316 (1-2) , 57-77
- https://doi.org/10.1016/0022-0728(91)87036-4
Abstract
No abstract availableThis publication has 54 references indexed in Scilit:
- The impact of semiconductors on the concepts of electrochemistryElectrochimica Acta, 1990
- Tafel Plots from Illuminated Photoelectrodes: A New Insight Into Charge Transfer MechanismJournal of the Electrochemical Society, 1990
- Relation between chemical and electrochemical steps in the anodic decomposition of Group III-Group V semiconductor electrodes: a comprehensive modelThe Journal of Physical Chemistry, 1990
- On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions: A Mechanistic StudyJournal of the Electrochemical Society, 1988
- Hole injection reactions and the potential distribution at the p-GaAs/electrolyte interface under anodic polarizationElectrochimica Acta, 1984
- Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox SystemJournal of the Electrochemical Society, 1984
- Surface Charging Effects during Photoanodic Dissolution of n ‐ GaAs ElectrodesJournal of the Electrochemical Society, 1983
- Electrochemical Studies of Photocorrosion of n ‐ CdSeJournal of the Electrochemical Society, 1983
- Surface Intermediates of an n‐Type Gallium Phosphide Electrode as Related with the Shifts of the Surface Band Energy Induced by Oxidants in SolutionJournal of the Electrochemical Society, 1981
- Photoanodic Dissolution Reaction of an n‐Type Gallium Phosphide Electrode and Its Effect on Energies of the Electronic Bands at the SurfaceJournal of the Electrochemical Society, 1980