An InGaAs-InP position-sensing photodetector
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (5) , 820-823
- https://doi.org/10.1109/3.55519
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Design of Bessel-type transimpedance preamplifiers for lateral-effect photodiodesInternational Journal of Electronics, 1989
- Extension Of The Dynamic Range Of Active Laser Range FindersPublished by SPIE-Intl Soc Optical Eng ,1989
- Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrateApplied Physics Letters, 1986
- Laser range finder based on synchronized scannersApplied Optics, 1984
- Pulse-response characteristics of position-sensitive photodetectorsIEEE Transactions on Electron Devices, 1974
- Lateral photodetector operating in the fully reverse-biased modeIEEE Transactions on Electron Devices, 1971
- On the charge dividing mechanism in position sensitive detectorsNuclear Instruments and Methods, 1967
- Photoeffects in Nonuniformly Irradiatedp-nJunctionsJournal of Applied Physics, 1960
- A New Semiconductor Photocell Using Lateral PhotoeffectProceedings of the IRE, 1957