The influence of non-uniformly doped substrates on mos C-V curves
- 31 December 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (12) , 1591-1595
- https://doi.org/10.1016/0038-1101(70)90037-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965