Sputter deposited strontium ferrite films with c-axis oriented normal to the film plane
- 21 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (12) , 1579-1581
- https://doi.org/10.1063/1.111845
Abstract
M‐type strontium ferrite films were deposited by radio‐frequency (rf) sputtering on fused quartz substrates kept at ambient temperatures. The as‐deposited films were amorphous. They crystallized on annealing at a temperature of 800 °C or higher. The films deposited at low rf power and low oxygen to argon ratio showed c‐axis orientation normal to the film plane. The magnetic properties of these films were studied using vibrating sample magnetometer, polar Kerr rotation, and torque magnetometer. The perpendicular M‐H loops for c‐axis oriented films were nearly rectangular with coercivity of the order of 3 kOe.Keywords
This publication has 6 references indexed in Scilit:
- Magnetic easy axis randomly in-plane oriented barium hexaferrite thin film mediaApplied Physics Letters, 1993
- Preparation and magnetic properties of epitaxial barium ferrite thin films on sapphire with in-plane, uniaxial anisotropyApplied Physics Letters, 1992
- Substrate effects on the crystalline orientation of barium hexaferrite filmsJournal of Applied Physics, 1991
- Epitaxial barium hexaferrite on sapphire by sputter depositionApplied Physics Letters, 1988
- Preparation and properties of Ba‐ferrite films by rf diode sputteringElectronics and Communications in Japan (Part II: Electronics), 1987
- Temperature Dependence of Ms and K1 of BaFe12O19 and SrFe12O19 Single CrystalsJournal of Applied Physics, 1969