LOCALIZED VIBRATIONAL MODES IN SILICON: B-P PAIR BANDS
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (11) , 326-329
- https://doi.org/10.1063/1.1754831
Abstract
Two infrared absorption bands attributed to substitutional boron‐phosphorus pairs in silicon are observed. The bands are close to the single, isolated boron band and all show approximately the same frequency shift with change in boronisotope. The pair bands occur near 599.7 and 629 cm−1 for 11B and 622.9 and ∼655 cm−1 for 10B. The results are compared with the theory of Elliott and Pfeuty. The number of pair bands, their isotope shift, and their proximity to the isolated B band are in agreement with theory. The Δν ∼ 30 cm−1 is an order of magnitude larger than predicted by the isotopic model indicating changes in force constants.Keywords
This publication has 6 references indexed in Scilit:
- Precipitation of phosphorus from solid solution in Ge-Si alloyJournal of Physics and Chemistry of Solids, 1966
- A study of vibrations of boron and phosphorus in silicon by infra-red absorptionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1965
- Localized Mode Measurements of Boron- and Lithium-Doped SiliconJournal of Applied Physics, 1965
- Localized Vibrations of Lithium Complexes in Gallium ArsenidePhysical Review B, 1965
- Localized vibration due to boron and lithium in the silicon latticeJournal of Physics and Chemistry of Solids, 1964
- Semiconducting Properties of Cubic Boron PhosphidePhysical Review Letters, 1960