Ninety-four GHz InAlAs/InGaAs/InP HEMT low-noise down-converter

Publisher Website
Google Scholar
Abstract
We have fabricated an integrated W-band downconverter using 0.15 micron T-gate lattice-matched InGaAs/InP High Electron Mobility Transistor. The two-stage MIC LNA demonstrated record performance with a minimum noise figure of 3.0 dB and 16.5 dB associated gain at 93 GHz. The active InP HEMT mixer showed 2.4 dB conversion gain and 7.3 dB noise figure at 94 GHz. This is the first reported active mixer conversion gain at W-band. The complete downconverter exhibited 3.6 dB noise figure and 17.8 dB conversion gain at the waveguide input. These state-of-the-art performances demonstrate that a complete W-band MMIC downconverter chip with extremely low noise figure and high conversion gain can be fabricated on the same wafer using the InP HEMT technology.

This publication has 0 references indexed in Scilit: