Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity
- 7 May 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (10) , 485-487
- https://doi.org/10.1049/el:19870353
Abstract
GaAs/GaAlAs buried quarter ring lasers with a constant stripe shape along the cavity were fabricated by ion beam etching. Threshold currents of 23 mA were obtained for 2 μm-wide and 430 μm-long cavities on a wafer, for which the broad-area threshold current density was l.7 kA/cm2. This structure leaves the rest of the wafer free for optoelectronic integration.Keywords
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