Distribution function of photoexcited carriers in highly excited GaAs
- 15 October 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 10 (8) , 3697-3699
- https://doi.org/10.1103/physrevb.10.3697
Abstract
We have extended our previous measurements of the radiative recombination from photoexcited hot carriers in GaAs to excitation intensities as high as 6 × W/. We find that for W/, the carrier distribution is no longer Maxwellian. Another interesting result is that the emission extends well into the red region of the spectrum. Our results can be used to estimate the photoexcited carrier densities at such high intensities.
Keywords
This publication has 4 references indexed in Scilit:
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- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960