Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
- 25 August 1975
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 54 (2) , 157-158
- https://doi.org/10.1016/0375-9601(75)90847-6
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Energy Dependence ofandChanneling in Si Overlaid with Au FilmsPhysical Review B, 1973
- Relations between Structure and the Optical and Electrical Properties of Amorphous Si and Ge FilmsJournal of Vacuum Science and Technology, 1971
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968