Effect of Au:Ge thickness on ohmic contacts to GaAs

5 June 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (12) , 632-633
https://doi.org/10.1049/el:19860433

Abstract

The GaAs/Au:Ge/Ni system has been studied at ELAB by varying the metal thicknesses and the temperature/time alloying profile. The results of the study suggest that there exists an optimal thickness of the metallisation and alloying time with respect to contact resistivity, for given ion implantation parameters.

Keywords

GAAS/AU:GE/NI SYSTEM
TEMPERATURE/TIME ALLOYING PROFILE
OHMIC CONTACTS TO GAAS
METALLISATION
AU:GE THICKNESS
CONTACT RESISTIVITY
METAL THICKNESSES
ALLOYING TIME
SEMICONDUCTORS
ION IMPLANTATION
OPTIMAL THICKNESS
ELAB

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