Double acceptor doped Ge: A new medium for inter-valence-band lasers

• 27 May 1996
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 68  (22) , 3075-3077
• https://doi.org/10.1063/1.116427

Abstract

Keywords

• FAR INFRARED
• VALENCE BAND
• BINDING ENERGY
• GERMANIUM
• DESIGN
• ZINC
• SEMICONDUCTOR LASERS
• DUTY CYCLE
• CONTINUOUS WAVE