CaS:Eu, F Thin Film Electroluminescent Devices Prepared by RF Sputtering with Hydrogen-Argon Mixture Gas

Abstract
CaS:Eu, F electroluminescent devices with high luminous characteristics were prepared by rf-magnetron sputtering. The film quality of the active layer was improved by preparation with hydrogen-added argon sputtering gas. The active layer thus prepared has preferential (220) orientation and enhanced columnar structure with reduced incorporated fluorine atoms. The environment around the luminescent center was also affected to some extent by hydrogen addition to the argon sputtering gas. A device with the luminance of 250 cd/m2 and the luminous efficiency of 0.2 lm/W at a 1 kHz sine wave operation was prepared.

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