Observation of the quantum Hall effect in planar-doped GaAs
- 1 June 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (6) , 620-622
- https://doi.org/10.1088/0268-1242/3/6/021
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Mobility of the two-dimensional electron gas at selectively doped n -type As/GaAs heterojunctions with controlled electron concentrationsPhysical Review B, 1986
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980