Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
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- 1 September 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (9L) , L1267
- https://doi.org/10.1143/jjap.44.l1267
Abstract
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities J c required for current-driven switching in samples annealed at 270 and 300°C are found to be as low as 7.8×105 and 8.8×105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350°C increases TMR ratio to 160%, while accompanying J c increases to 2.5×106 A/cm2. We attribute the low J c to the high spin-polarization of tunnel current and small M s V product of the CoFeB single free layer, where M s is the saturation magnetization and V the volume of the free layer.Keywords
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