Electrical properties of thermal oxides on GaAs
- 15 September 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (19) , 558-559
- https://doi.org/10.1049/el:19770400
Abstract
The growth and electrical properties of oxides grown on GaAs at 510°C have been studied. Results show that growth with time follows a parabolic law and that electrical properties are, in general, very different from those of oxides grown anodically.Keywords
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